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NTMFS4936N,
NTMFS4936NC
Power MOSFET
30 V, 79 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) , Low Capacitance and Optimized Gate Charge to
Minimize Conduction, Driver and Switching Losses
? Next Generation Enhanced Body Diode, Engineered for Soft
Recovery, Provides Schottky ? Like Performance
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
3.8 m W @ 10 V
4.8 m W @ 4.5 V
D (5,6)
I D MAX
79 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
S
4936N
S
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
I D
P D
I D
P D
I D
P D
I D
19.5
12.3
2.62
35
22
8.4
11.6
7.3
0.92
79
50
A
W
A
W
A
W
A
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO ? 8 FLAT LEAD S AYWZZ
CASE 488AA G
STYLE 1 D
4936N
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
D
D
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
43
W
Pulsed DrainCurrent T A = 25 ° C, t p = 10 m s
Current Limited by Package T A = 25 ° C
I DM
I Dmax
235
100
A
A
ORDERING INFORMATION
Operating Junction and Storage T J , ? 55 to ° C
Temperature T STG +150
Source Current (Body Diode) I S 39.2 A
Drain to Source DV/DT dV/d t 6.0 V/ns
Single Pulse Drain ? to ? Source Avalanche E AS 96.8 mJ
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 44 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
Device Package Shipping ?
NTMFS4936NT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4936NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
NTMFS4936NCT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4936NCT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 9
1
Publication Order Number:
NTMFS4936N/D
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